Oxide ya Gallium | |
Imiti yimiti | Ga2O3 |
Imirase | 187.444 g / mol [1] |
Kugaragara | ifu ya kirisiti yera |
Ubucucike | 6.44 g / cm3, alfa;5.88 g / cm3, beta |
Ingingo yo gushonga | 1,900 ° C (3,450 ° F; 2,170K) alfa;1725 ° C, beta |
Gukemura amazi | kutabasha |
Gukemura | gushonga muri acide nyinshi |
Ibiranga ubuziranenge bwa Gallium Oxide
Ingingo No. | Ibigize imiti | Ingano ya Particle | ||||||||
Ca2O3 | Mat.(Igisubizo cyubugenzuzi) PPM | D50 | ||||||||
(wt%) | Ni | Cu | Ca | Fe | Zn | In | Mn | Cr | μm | |
UMGO4N | ≥99.99% | 8.2 | 3.8 | 2.5 | 2.4 | 0.8 | 0.4 | 0.1 | 0.1 | 3.82 |
Gupakira: 25 kg / icupa rya plastike, icupa 20 / ikarito.
Oxide ya Gallium ikoreshwa iki?
Oxide ya Galliumikoreshwa muri laseri, fosifore, nibikoresho bya luminescent.Monoclinic ß-Ga2O3 yakoreshejwe kuri sensor ya gaze, fosifori ya luminescent hamwe na dielectric ya selile yizuba.Nka oxyde ihamye, ifite kandi ubushobozi bwimbitse-ultraviolet ibonerana ya okiside ikora neza, hamwe na transistor ikoreshwa.Filime ntoya ya Ga2O3 irashimishije mubucuruzi nkibikoresho byoroshye gaze.Ox-Gallium (III) oxyde ikoreshwa mugukora catalizator ya Ga2O3-Al2O3.Birashoboka kandi: Gallium Oxide Intego ya Ga2O3.