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Gallium (III) trioxide (Ga2O3) 99,99% + ibyuma by'icyuma 12024-21-4

Ibisobanuro bigufi:

Oxide ya Galliumni tekinoroji yingirakamaro ya semiconductor kandi yakoreshejwe mubikorwa bitandukanye, nkubushyuhe bwo hejuru…


Ibicuruzwa birambuye

Ibicuruzwa

Oxide ya Gallium
Imiti yimiti Ga2O3
Imirase 187.444 g / mol [1]
Kugaragara ifu ya kirisiti yera
Ubucucike 6.44 g / cm3, alfa;5.88 g / cm3, beta
Ingingo yo gushonga 1,900 ° C (3,450 ° F; 2,170K) alfa;1725 ° C, beta
Gukemura amazi kutabasha
Gukemura gushonga muri acide nyinshi

 

Ibiranga ubuziranenge bwa Gallium Oxide

Ingingo No. Ibigize imiti Ingano ya Particle
Ca2O3 Mat.(Igisubizo cyubugenzuzi) PPM D50
(wt%) Ni Cu Ca Fe Zn In Mn Cr μm
UMGO4N ≥99.99% 8.2 3.8 2.5 2.4 0.8 0.4 0.1 0.1 3.82

Gupakira: 25 kg / icupa rya plastike, icupa 20 / ikarito.

 

Oxide ya Gallium ikoreshwa iki?

Oxide ya Galliumikoreshwa muri laseri, fosifore, nibikoresho bya luminescent.Monoclinic ß-Ga2O3 yakoreshejwe kuri sensor ya gaze, fosifori ya luminescent hamwe na dielectric ya selile yizuba.Nka oxyde ihamye, ifite kandi ubushobozi bwimbitse-ultraviolet ibonerana ya okiside ikora neza, hamwe na transistor ikoreshwa.Filime ntoya ya Ga2O3 irashimishije mubucuruzi nkibikoresho byoroshye gaze.Ox-Gallium (III) oxyde ikoreshwa mugukora catalizator ya Ga2O3-Al2O3.Birashoboka kandi: Gallium Oxide Intego ya Ga2O3.


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